IKW50N65H5FKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
$5.20
Available to order
Reference Price (USD)
1+
$5.52000
10+
$4.99300
240+
$4.15479
720+
$3.58939
1,200+
$3.08245
Exquisite packaging
Discount
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The IKW50N65H5FKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKW50N65H5FKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKW50N65H5FKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 305 W
- Switching Energy: 520µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 21ns/180ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): 57 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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