IKZ75N65NH5
Infineon Technologies
Infineon Technologies
IKZ75N65 - DISCRETE IGBT WITH AN
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Experience top-tier performance with the IKZ75N65NH5 Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IKZ75N65NH5 ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 880µJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 166 nC
- Td (on/off) @ 25°C: 52ns/412ns
- Test Condition: 400V, 37.5A, 27Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4-1
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