IMB11AT110
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS DUAL PNP SMT6
$0.09
Available to order
Reference Price (USD)
3,000+
$0.08200
6,000+
$0.07380
15,000+
$0.06560
30,000+
$0.06150
75,000+
$0.05740
Exquisite packaging
Discount
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The IMB11AT110 from Rohm Semiconductor represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Rohm Semiconductor's expertise in semiconductor manufacturing guarantees that the IMB11AT110 meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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