IMD16AT108
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.3W SMT6
$0.53
Available to order
Reference Price (USD)
3,000+
$0.12375
6,000+
$0.11625
15,000+
$0.10875
30,000+
$0.10500
Exquisite packaging
Discount
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The IMD16AT108 by Rohm Semiconductor is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Rohm Semiconductor's state-of-the-art production facilities ensure that the IMD16AT108 delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 100kOhms, 2.2kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
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