IMD9AT108
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.3W SMT6
$0.39
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09350
15,000+
$0.08525
30,000+
$0.07975
75,000+
$0.07700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with Rohm Semiconductor's IMD9AT108, a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The IMD9AT108 is perfect for use in audio equipment, power supplies, and automotive control systems. With Rohm Semiconductor's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the IMD9AT108 is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
Related Products
Diodes Incorporated
ACX124EUQ-7R
Infineon Technologies
BCR22PNH6327XTSA1
Nexperia USA Inc.
PUMD3,135
Toshiba Semiconductor and Storage
RN1702,LF
Toshiba Semiconductor and Storage
RN4983,LF(CT
Nexperia USA Inc.
PUMB10,115
onsemi
NSBA143TDXV6T5G
onsemi
SMUN2212T1
Nexperia USA Inc.
PEMD16,115
Diodes Incorporated