IMW120R040M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$23.72
Available to order
Reference Price (USD)
1+
$23.72000
500+
$23.4828
1000+
$23.2456
1500+
$23.0084
2000+
$22.7712
2500+
$22.534
Exquisite packaging
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Discover the IMW120R040M1HXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IMW120R040M1HXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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