IMW120R140M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 19A TO247-3
$11.68
Available to order
Reference Price (USD)
1+
$11.68000
500+
$11.5632
1000+
$11.4464
1500+
$11.3296
2000+
$11.2128
2500+
$11.096
Exquisite packaging
Discount
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The IMW120R140M1HXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IMW120R140M1HXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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