IMZ120R060M1HXKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 36A TO247-4
$18.32
Available to order
Reference Price (USD)
1+
$18.32000
500+
$18.1368
1000+
$17.9536
1500+
$17.7704
2000+
$17.5872
2500+
$17.404
Exquisite packaging
Discount
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Meet the IMZ120R060M1HXKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IMZ120R060M1HXKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
- Vgs (Max): +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-1
- Package / Case: TO-247-4
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