IMZA120R014M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$55.86
Available to order
Reference Price (USD)
1+
$55.86000
500+
$55.3014
1000+
$54.7428
1500+
$54.1842
2000+
$53.6256
2500+
$53.067
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Discover the IMZA120R014M1HXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IMZA120R014M1HXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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