IPA083N10NM5SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 50A TO220
$1.28
Available to order
Reference Price (USD)
1+
$1.27974
500+
$1.2669426
1000+
$1.2541452
1500+
$1.2413478
2000+
$1.2285504
2500+
$1.215753
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPA083N10NM5SXKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPA083N10NM5SXKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
NTP15N06AV
onsemi
NVTFWS027N10MCLTAG
IXYS
IXTY26P10T-TRL
onsemi
NVMYS1D6N04CLTWG
Diodes Incorporated
DMN7022LFG-7
Infineon Technologies
IAUC60N06S5N074ATMA1
Diodes Incorporated
DMT6002LPS-13
Diodes Incorporated
DMT10H009LFG-13
Diodes Incorporated
DMN2450UFB4Q-7B
Vishay Siliconix