IPA50R190CEXKSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 18.5A TO220
$2.70
Available to order
Reference Price (USD)
1+
$2.15000
10+
$1.96000
100+
$1.59770
500+
$1.26794
1,000+
$1.07011
Exquisite packaging
Discount
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The IPA50R190CEXKSA2 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPA50R190CEXKSA2 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 510µA
- Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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