IPA60R360P7SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 9A TO220
$1.67
Available to order
Reference Price (USD)
1+
$1.35000
10+
$1.20900
100+
$0.96880
500+
$0.76562
1,000+
$0.61787
Exquisite packaging
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Discover the IPA60R360P7SXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPA60R360P7SXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 22W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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