Shopping cart

Subtotal: $0.00

IPA60R600P6XKSA1

Infineon Technologies
IPA60R600P6XKSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 4.9A TO220-FP
$2.12
Available to order
Reference Price (USD)
1+
$1.81000
10+
$1.60500
100+
$1.26830
500+
$0.98356
1,000+
$0.77649
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack

Related Products

Microchip Technology

TP5322K1-G

Texas Instruments

TPIC5423LDW

Vishay Siliconix

SIR424DP-T1-GE3

Infineon Technologies

IRLR024NTRLPBF

STMicroelectronics

STF19NF20

Infineon Technologies

IPB027N10N3GATMA1

Alpha & Omega Semiconductor Inc.

AOT254L

Panjit International Inc.

PJD7NA60_R2_00001

Top