IPAW60R280CEXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 19.3A TO220
$0.82
Available to order
Reference Price (USD)
1+
$1.87000
10+
$1.65400
450+
$1.14727
900+
$0.88579
1,350+
$0.80041
Exquisite packaging
Discount
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Enhance your electronic projects with the IPAW60R280CEXKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPAW60R280CEXKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
- Package / Case: TO-220-3 Full Pack, Variant
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