IPB072N15N3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
$7.94
Available to order
Reference Price (USD)
1,000+
$3.16639
2,000+
$3.00808
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB072N15N3GATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPB072N15N3GATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
TK7S10N1Z,LQ
onsemi
NTMFS5C426NT3G
Infineon Technologies
IRFR4105TRLPBF
Fairchild Semiconductor
HUFA75309P3
Diodes Incorporated
ZVP2110A
IXYS
IXTA12N50P
STMicroelectronics
STD7LN80K5
PN Junction Semiconductor
P3M12025K4
Fairchild Semiconductor
FDFC3N108
Fairchild Semiconductor