IPB136N08N3GATMA1
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB136N08N3GATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPB136N08N3GATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Infineon Technologies
IPSA70R750P7SAKMA1
STMicroelectronics
STL55NH3LL
onsemi
FQP45N15V2
STMicroelectronics
STP12N120K5
NXP USA Inc.
PMV28UN,215
Nexperia USA Inc.
BUK6213-30C,118
Wolfspeed, Inc.
C2M1000170D
onsemi
NVMFS5C670NLWFAFT3G
onsemi
FDD120AN15A0-F085
Rohm Semiconductor