IPB180N06S4H1ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 180A TO263-7
$0.00
Available to order
Reference Price (USD)
1,000+
$1.43681
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB180N06S4H1ATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPB180N06S4H1ATMA1 for their critical applications.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
onsemi
NVMFS5C430NT3G
IXYS
IXFN48N50
NXP USA Inc.
BUK9524-55A,127
Nexperia USA Inc.
BUK6210-55C,118
Infineon Technologies
IRL2505S
onsemi
FDD5N53TM_WS
Vishay Siliconix
SI4411DY-T1-E3
onsemi
MTD4N20E1
Infineon Technologies
IPB055N03LGATMA1
Vishay Siliconix