IPB180P04P4L02ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 180A TO263-7
$4.95
Available to order
Reference Price (USD)
1,000+
$1.68892
2,000+
$1.60447
5,000+
$1.54415
Exquisite packaging
Discount
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The IPB180P04P4L02ATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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