IPB60R045P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 61A TO263-3-2
$9.93
Available to order
Reference Price (USD)
1+
$9.93000
500+
$9.8307
1000+
$9.7314
1500+
$9.6321
2000+
$9.5328
2500+
$9.4335
Exquisite packaging
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Meet the IPB60R045P7ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPB60R045P7ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.08mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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