IPB65R115CFD7AATMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO263-3
$7.22
Available to order
Reference Price (USD)
1+
$7.22000
500+
$7.1478
1000+
$7.0756
1500+
$7.0034
2000+
$6.9312
2500+
$6.859
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB65R115CFD7AATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPB65R115CFD7AATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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