IPC60R600E6X1SA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH BARE DIE
$0.00
Available to order
Reference Price (USD)
21,411+
$0.69344
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPC60R600E6X1SA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPC60R600E6X1SA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Infineon Technologies
ISP06P005NXTSA1
Infineon Technologies
IRFC130NB
Infineon Technologies
SIPC08N60C3X1SA1
Infineon Technologies
IRFC4227ED
Vishay Siliconix
SIHF9540PBF
onsemi
FQPF7N65CYDTU-T
Renesas Electronics America Inc
2SK2723-AZ
Alpha & Omega Semiconductor Inc.
AOD4TL60
onsemi
2SJ257-E
Infineon Technologies