IPD048N06L3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
$0.78
Available to order
Reference Price (USD)
1+
$0.77880
500+
$0.771012
1000+
$0.763224
1500+
$0.755436
2000+
$0.747648
2500+
$0.73986
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD048N06L3GATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD048N06L3GATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-311
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPP60R125CFD7XKSA1
STMicroelectronics
STP80NF03L-04
onsemi
FCH041N65EF-F155
STMicroelectronics
STF33N60DM6
onsemi
NVBLS0D5N04M8TXG
Rohm Semiconductor
SCT4062KEC11
IXYS
IXFR48N60Q3
IXYS
IXTH1N250
IXYS
IXFT150N20T
Alpha & Omega Semiconductor Inc.