IPD048N06L3GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
$1.29
Available to order
Reference Price (USD)
2,500+
$0.53900
5,000+
$0.51205
12,500+
$0.49280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPD048N06L3GBTMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPD048N06L3GBTMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXFK180N15P
Infineon Technologies
BSP149H6906XTSA1
IXYS
IXFA102N15T
Rohm Semiconductor
RUF025N02TL
Nexperia USA Inc.
PMV28ENEAR
Infineon Technologies
IRFR7446TRPBF
IXYS
IXTX46N50L
onsemi
NTMFS7D8N10GTWG
Vishay Siliconix
IRFR9024TRLPBF
Fairchild Semiconductor