IPD25N06S4L30ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 25A TO252-31
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
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Optimize your power electronics with the IPD25N06S4L30ATMA2 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPD25N06S4L30ATMA2 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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