IPD26N06S2L35ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 30A TO252-31
$1.25
Available to order
Reference Price (USD)
2,500+
$0.29874
5,000+
$0.27814
12,500+
$0.26784
25,000+
$0.26222
Exquisite packaging
Discount
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Upgrade your designs with the IPD26N06S2L35ATMA2 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPD26N06S2L35ATMA2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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