IPD50R950CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 4.3A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.24290
5,000+
$0.22894
12,500+
$0.21498
25,000+
$0.20521
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD50R950CEATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD50R950CEATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
IXYS
IXFK150N15P
onsemi
MTP20N15E
Infineon Technologies
AUIRF3415
Taiwan Semiconductor Corporation
TSM2N100CP ROG
IXYS
IXFT74N20
IXYS
IXFK20N120
Vishay Siliconix
SUM40N02-12P-E3
NXP USA Inc.
BUK7614-55A,118
onsemi
NTMFS4925NT3G
Infineon Technologies