IPD60R600C6BTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 7.3A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.62471
5,000+
$0.59721
12,500+
$0.57756
25,000+
$0.56185
62,500+
$0.54613
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPD60R600C6BTMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPD60R600C6BTMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRF2903ZLPBF
Fairchild Semiconductor
HUFA75617D3S
Infineon Technologies
IRF7459TRPBF
STMicroelectronics
STB16PF06LT4
Vishay Siliconix
IRLU3714TR
Infineon Technologies
AUIRF2804
Infineon Technologies
IRLR7821TRRPBF
Infineon Technologies
BSS7728NH6327XTSA1
Infineon Technologies
IRF8252TRPBF-1
onsemi