IPD70R2K0CEAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 4A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.25353
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPD70R2K0CEAUMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPD70R2K0CEAUMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPD25N06S240ATMA1
Vishay Siliconix
SUM75N06-09L-E3
Vishay Siliconix
SQ7415AEN-T1_GE3
onsemi
FQA22P10
onsemi
FDP15N40
Infineon Technologies
IRF1407S
IXYS
IXTA160N085T
onsemi
NTD85N02R
onsemi
FQD5N60CTF
Fairchild Semiconductor