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IPD90P03P4L04ATMA1

Infineon Technologies
IPD90P03P4L04ATMA1 Preview
Infineon Technologies
MOSFET P-CH 30V 90A TO252-3
$2.99
Available to order
Reference Price (USD)
2,500+
$0.82403
5,000+
$0.79351
12,500+
$0.77686
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Not For New Designs
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 253µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Vgs (Max): +5V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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