IPDD60R075CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 40A HDSOP-10
$8.50
Available to order
Reference Price (USD)
1+
$8.50000
500+
$8.415
1000+
$8.33
1500+
$8.245
2000+
$8.16
2500+
$8.075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPDD60R075CFD7XTMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPDD60R075CFD7XTMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
Related Products
Toshiba Semiconductor and Storage
SSM3K15AFS,LF
Diodes Incorporated
DMTH6010LK3Q-13
Fairchild Semiconductor
HUF76121S3ST
Vishay Siliconix
IRL630PBF-BE3
Infineon Technologies
IPB65R190CFDAATMA1
Infineon Technologies
IMW120R350M1HXKSA1
Fairchild Semiconductor
NDB4060
Micro Commercial Co
BSS123K-TP
Toshiba Semiconductor and Storage
SSM3K62TU,LXHF
Renesas Electronics America Inc