IPDQ60R010S7AXTMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE PG-HDSOP-22
$40.08
Available to order
Reference Price (USD)
1+
$40.08000
500+
$39.6792
1000+
$39.2784
1500+
$38.8776
2000+
$38.4768
2500+
$38.076
Exquisite packaging
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Discover the IPDQ60R010S7AXTMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPDQ60R010S7AXTMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
- Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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