IPDQ60R040S7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$12.67
Available to order
Reference Price (USD)
1+
$12.67000
500+
$12.5433
1000+
$12.4166
1500+
$12.2899
2000+
$12.1632
2500+
$12.0365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPDQ60R040S7XTMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPDQ60R040S7XTMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
Related Products
Renesas Electronics America Inc
2SK1959-T1-AZ
onsemi
MTP75N06HD
Vishay Siliconix
SIHFR120-GE3
Harris Corporation
IRF331
Harris Corporation
RFD16N03LSM9A
IXYS
IXTY01N100-TRL
Rohm Semiconductor
RS3E130ATTB1
onsemi
NVTFS070N10MCLTAG
Harris Corporation
IRFD9110
GeneSiC Semiconductor