IPG20N04S4L07AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$1.92
Available to order
Reference Price (USD)
5,000+
$0.86701
Exquisite packaging
Discount
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The IPG20N04S4L07AATMA1 by Infineon Technologies is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the IPG20N04S4L07AATMA1 ensures consistent and dependable performance. Infineon Technologies's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
- Power - Max: 65W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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