IPG20N06S4L14ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 8TDSON
$0.00
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Reference Price (USD)
5,000+
$0.52881
Exquisite packaging
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Optimize your electronic projects with the IPG20N06S4L14ATMA1 from Infineon Technologies, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the IPG20N06S4L14ATMA1 ensures top-notch performance. Infineon Technologies's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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