IPI020N06NAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 29A/120A TO262
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Reference Price (USD)
500+
$2.86846
Exquisite packaging
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Meet the IPI020N06NAKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPI020N06NAKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 143µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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