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IPI100P03P3L-04

Infineon Technologies
IPI100P03P3L-04 Preview
Infineon Technologies
MOSFET P-CH 30V 100A TO262-3
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 475µA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Vgs (Max): +5V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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