IPI47N10S33AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 47A TO262-3
$1.67
Available to order
Reference Price (USD)
500+
$1.25856
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPI47N10S33AKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPI47N10S33AKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPP80N06S4L07AKSA1
Panjit International Inc.
PJA3416A_R1_00001
Fairchild Semiconductor
FQU2N60TU
onsemi
NTMFS5844NLT1G
STMicroelectronics
STD45N10F7
Rohm Semiconductor
RV1C001ZPT2L
IXYS
IXTR48P20P
Infineon Technologies
IPB60R160P6ATMA1
Infineon Technologies
IPI051N15N5AKSA1
onsemi