IPI80N06S3L-05
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI80N06S3L-05 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPI80N06S3L-05 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
IRFIB5N65A
onsemi
NVMFS5833NLT1G
Infineon Technologies
IRF3205STRRPBF
onsemi
NTMFD4C50NT3G
Nexperia USA Inc.
BUK7908-40AIE,127
Infineon Technologies
IRFZ44EL
Infineon Technologies
IPU13N03LA G
STMicroelectronics
STL8N65M5
onsemi
2N7002WST1G
Vishay Siliconix