IPN50R3K0CE
Infineon Technologies
Infineon Technologies
SMALL SIGNAL FIELD-EFFECT TRANSI
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The IPN50R3K0CE from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPN50R3K0CE offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-3
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