IPN60R1K5PFD7SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3.6A SOT223
$0.91
Available to order
Reference Price (USD)
1+
$0.91000
500+
$0.9009
1000+
$0.8918
1500+
$0.8827
2000+
$0.8736
2500+
$0.8645
Exquisite packaging
Discount
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Meet the IPN60R1K5PFD7SATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPN60R1K5PFD7SATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
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