IPP019N08NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V
$3.34
Available to order
Reference Price (USD)
1+
$3.34000
500+
$3.3066
1000+
$3.2732
1500+
$3.2398
2000+
$3.2064
2500+
$3.173
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP019N08NF2SAKMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 191A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 194µA
- Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
PSMN1R8-30BL,118
Taiwan Semiconductor Corporation
TSM4NB60CH X0G
Microchip Technology
APT51F50J
Rohm Semiconductor
RSH090N03TB1
Diodes Incorporated
DMN60H080DS-13
Infineon Technologies
AUIRF8736M2TR
Panjit International Inc.
PJQ5450-AU_R2_000A1
Infineon Technologies
BSS308PEH6327XTSA1
Infineon Technologies
IPA70R900P7SXKSA1
Vishay Siliconix