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IPP039N04LGXKSA1

Infineon Technologies
IPP039N04LGXKSA1 Preview
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
$1.71
Available to order
Reference Price (USD)
1+
$1.37000
10+
$1.21500
100+
$0.96020
500+
$0.74466
1,000+
$0.58790
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3

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