IPP040N06N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO220-3
$2.29
Available to order
Reference Price (USD)
1+
$2.01000
10+
$1.79100
100+
$1.43530
500+
$1.13430
1,000+
$0.91541
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP040N06N3GXKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPP040N06N3GXKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
NXP Semiconductors
PMPB95ENEA/FX
Diodes Incorporated
DMN62D0U-13
Renesas Electronics America Inc
3SK323UG-TL-E
onsemi
2SJ655
Vishay Siliconix
IRLR024TRLPBF
Infineon Technologies
IRFB7430GPBF
Diodes Incorporated
BSS84WQ-7-F
Microchip Technology
APL602LG
Infineon Technologies
IRFB3307ZPBF
Diodes Incorporated