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IPP100N06S3L-04

Infineon Technologies
IPP100N06S3L-04 Preview
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3

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