IPP25N06S3L-22
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 25A TO220-3
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The IPP25N06S3L-22 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP25N06S3L-22 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 21.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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