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IPP60R074C6XKSA1

Infineon Technologies
IPP60R074C6XKSA1 Preview
Infineon Technologies
MOSFET N-CH 600V 57.7A TO220-3
$0.00
Available to order
Reference Price (USD)
500+
$5.92436
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 57.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 480.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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