IPP60R160C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 23.8A TO220-3
$5.14
Available to order
Reference Price (USD)
1+
$4.15000
10+
$3.72900
100+
$3.10120
500+
$2.55710
1,000+
$2.19434
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPP60R160C6XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPP60R160C6XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STI76NF75
STMicroelectronics
STDLED656
onsemi
FDMC8360L
Rohm Semiconductor
RT1A040ZPTR
Sanyo
MCH6336-TL-E
STMicroelectronics
STB34NM60ND
Vishay Siliconix
SQ3469EV-T1_GE3
onsemi
NVTFS5124PLTWG
Fairchild Semiconductor
FQAF33N10
onsemi