IPP60R180P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 18A TO220-3
$3.24
Available to order
Reference Price (USD)
1+
$2.95000
10+
$2.67500
100+
$2.18050
500+
$1.73050
1,000+
$1.46049
Exquisite packaging
Discount
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The IPP60R180P7XKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPP60R180P7XKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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