IPP60R280E6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 13.8A TO220-3
$2.05
Available to order
Reference Price (USD)
500+
$1.56830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPP60R280E6XKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPP60R280E6XKSA1 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Rectron USA
RM50N150DF
onsemi
FCD600N65S3R0
STMicroelectronics
STFH13N60M2
Infineon Technologies
IRF7805ZTRPBF
STMicroelectronics
STB6NK60Z-1
onsemi
BFL4036-1E
onsemi
SCH1430-TL-W
Fairchild Semiconductor
FQP9N08L
IXYS
IXTA1N120P
Vishay Siliconix