IPS70R600CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 10.5A TO251-3
$0.00
Available to order
Reference Price (USD)
1+
$0.83000
10+
$0.72600
100+
$0.55660
500+
$0.44000
1,000+
$0.35200
Exquisite packaging
Discount
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The IPS70R600CEAKMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPS70R600CEAKMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 0.21mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
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